?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com bc856- bc860 rev. b bc856- bc860 pnp epitaxi al silicon transistor tm august 2006 bc856- bc860 pnp epitaxial silicon transistor features ? switching and amplifier applications ? suitable for automatic insertion in thick and thin-film circuits ? low noise: bc859, bc860 ? complement to bc846 ... bc850 absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. electrical characteristics* t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage : bc856 : bc857/860 : bc858/859 -80 -50 -30 v v v v ceo collector-emitter voltage : bc856 : bc857/860 : bc858/859 -65 -45 -30 v v v v ebo emitter-base voltage -5 v i c collector current (dc) -100 ma p c collector power dissipation 310 mw t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current v cb = -30v, i e =0 -15 na h fe dc current gain v ce = -5v, i c = -2ma 110 800 v ce (sat) collector-emitter saturation voltage i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5ma -90 -250 -300 -650 mv mv v be (sat) base-emitter saturation voltage i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5ma -700 -900 mv mv v be (on) base-emitter on voltage v ce = -5v, i c = -2ma v ce = -5v, i c = -10ma -600 -660 -750 -800 mv mv f t current gain bandwidth product v ce = -5v, i c = -10ma f=100mhz 150 mhz c ob output capacitance v cb = -10v, i e =0, f=1mhz 6 pf nf noise figure : bc856/857/858 : bc859/860 v ce = -5v, i c = -200 a r g =2k ?, f=1khz 2 1 10 4 db db : bc859 : bc860 v ce = -5v, i c = -200 a r g =2k ? , f=30~15000hz 1.2 1.2 4 2 db db 1. base 2. emitter 3. collector sot-23 1 2 3
2 www.fairchildsemi.com bc856- bc860 rev. b bc856- bc860 pnp epitaxi al silicon transistor h fe classification ordering information note1 : affix ?-a,-b,-c? means hfe classification. affix ?-m? means the matte type package. affix ?-tf? means the tape & reel type packing. classification a b c h fe 110 ~ 220 200 ~ 450 420 ~ 800 device (note1) device marking package packing method qty(pcs) pin difinitions bc856amtf 9aa sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc856bmtf 9ab sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc856cmtf 9ac sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc857amtf 9ba sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc857bmtf 9bb sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc857cmtf 9bc sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc858amtf 9ca sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc858bmtf 9cb sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc858cmtf 9cc sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc859amtf 9da sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc859bmtf 9db sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc859cmtf 9dc sot-23 tape & reel 3000 1.base 2.emitter 3.collector BC860AMTF 9ea sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc860bmtf 9eb sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc860cmtf 9ec sot-23 tape & reel 3000 1.base 2.emitter 3.collector
3 www.fairchildsemi.com bc856- bc860 rev. b bc856- bc860 pnp epitaxi al silicon transistor typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 i b = - 50 a i b = - 100 a i b = - 150 a i b = - 200 a i b = - 250 a i b = - 300 a i b = - 350 a i b = - 400 a i c [ma], collector current v ce [v], collector-emitter voltage -0.1 -1 -10 -100 10 100 1000 v ce = - 5v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce = - 5v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 1 10 f=1mhz i e =0 c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 10 100 1000 f=1mhz i e =0 f t [mhz], current gain-bandwidth product i c [ma], collector current
4 www.fairchildsemi.com bc856- bc860 rev. b bc856- bc860 pnp epitaxi al silicon transistor mechanical dimensions 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 dimensions in millimeters
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